AL/CUFES2/ITO BEHAVES LIKE SWITCH DEVICE WITH NEGATIVE DIFFERENTIAL RESISTANCE

Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device.

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/detrapping of electrons at the BaTiO3-Cu interface. In addition, we demonstrate that...

Nanoparticle-induced negative differential resistance and memory effect in polymer bistable light-emitting device

Spin Prohibition as a Mechanism of the Negative Differential Resistance in a Single- Molecule Microelectronic Device

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative dif...

Room temperature negative differential resistance of a monolayer molecular rotor device

molecular rotor device Mei Xue, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benitez, Rachel M. Stephenson, William A. Goddard, Jeffrey I. Zink, and Kang L. Wang Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA Department of Chemistry and Biochemistry, University of California, Los Angeles, California 9009...